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| smd type ic smd type transistors 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 1 input 2drain 3 source features trenchmos output stage current limiting overload protection overtemperature protection protection latched reset by input 5 v logic compatible input level control of output stage and supply of overload protection circuits derived from input low operating input current permits direct drive by micro-controller esdprotectiononallpins overvoltage clamping for turn off of inductive loads absolute maximum ratings ta = 25 parameter symbol rating unit continuous drain source voltage v ds 50 v continuous drain current v is =5v;t mb =25 i d selflimited a continuous drain current v is =5v;t mb 125 i d 8a continuous input current i i -5 to 5 ma repetitive peak input current tp 1ms i irm -10to10 ma total power dissipation t mb 25 p d 40 w storage temperature t stg -55to175 continuous junction temperature normal operation t j 150 case temperature during soldering t sold 260 electrostatic discharge capacitor voltage * v c 2kv * c = 250 pf; r = 1.5 k KUK128-50DL smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit non-repetitive clamping energy e dsm i dm =8a;v dd 20 v;t mb 25 100 mj repetitive clamping energy e drm i dm =8a;v dd 20 v;t mb 95 ;f=250hz 20 mj drain source voltage v ds 4v v is 5.5 v 035v v is =0v;i d =10ma 50 v v is =0v;i dm =2a;t p 300 s; ? 0.01 50 60 70 v v ds = 40 v 100 a v ds =40v;t mb =25 0.1 10 a v is 4.4 v; t p 300 s; ? 0.01;i dm =3a 190 m v is 4.4v; t p 300s;? 0.01;i dm =3a;t mb =25 68 100 m v is 4v;t p 300 s; ? 0.01;i dm =3a 200 m v is 4v;t p 300s;? 0.01;i dm =3a;t mb =25 72 105 m v ds =13v;v is =5v;t mb =25 81216a v ds = 13 v;4.4 v v is 5.5 v 618a v ds =13v;4v v is 5.5 v 518a overload power threshold p d(to) device trips if p d p d(to); v is =5v;t mb =25 20 55 80 w characteristic time t dsc 200 350 600 s threshold junction temperature t j(to) 150 170 v ds =5v;i d =1ma 0.6 2.4 v v ds =5v;i d =1ma;t mb =25 1.1 1.6 2.1 v normal operation;v is = 5 v 100 220 400 normal operation;v is = 4 v 80 195 330 protection latched;v is = 5 v 200 400 650 protection latched;v is = 3 v 130 250 430 protection reset voltage v isr reset time tr 100 s 1.5 2 2.9 v latch reset time t lr v is1 =5v,v is2 < 1 v 10 40 100 s input clamping voltage v (cl)is i i = 1.5 ma 5.5 8.5 v input series resistance to gate of power mosfet r ig i i = 1.5 ma;t mb =25 33 k turn-on delay time t don 820 rise time t r 20 50 turn-off delay time t doff 25 70 fall time t f 16 40 junction to mounting base r th j-mb 2.5 3.1 k/w junction to ambient r th j-a minimum footprint fr4 pcb 50 k/w drain-source resistance r ds(on) v (cl)dss drain-source clamping voltage i dss drain source leakage current v is(to) input threshold voltage drain current limiting i d input supply current i isl s a v is =5v v is =0v i is input supply current smd type ic smd type transistors KUK128-50DL smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com |
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